Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节前的顺序储存
记忆体中。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
组(word, 4
元组)长度的记忆体存取允许不对齐记忆体
,
组是以低
节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁
性的性质,被预期能运
性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
组(word, 4
元组)长度的记忆体存取允许不对齐记忆体
,
组是以低
节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁
性的性质,被预期能运
性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字(word, 4
)长度的记忆体存取允许不对齐记忆体
址,字
是
低
字节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的
件和积体电路的材料上。
:
上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4元组)长度的记忆体存取允许不对齐记忆体
址,字组是
字节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,
能运用
磁性记忆体的元件和积体电路的材料上。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度记忆体存取允许不对齐记忆体位址,字组是以低位字节
序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温
质,被预期能运用
记忆体
元件和积体电路
材料上。
声明:以上例句、词分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字(word, 4
)长度的记忆体存取允许不对齐记忆体
址,字
是
低
字节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的
件和积体电路的材料上。
:
上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
(word, 4位元
)长度的记忆体存取允许不对齐记忆体位
,
是以低位
节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,被预期能
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。