Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节前的顺序储存
记忆体中。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆许不对齐记忆
位址,字组是以低位字节
前的顺序储
记忆
中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆
的元件
电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,
组是以低位
节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
组(word, 4位元组)长度
记忆体存取允许不对齐记忆体位址,
组是以低位
前
顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁
,被预期能运用
磁
记忆体
元件和积体电路
材料上。
声明:以上例句、词分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁
的
质,被预期能运用
磁
记忆体的元件和积体电路的材料上。
声明:以上句、词
均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度记忆体存取允许不对齐记忆体位址,字组是以低位字节
顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁
质,被预期能运用
记忆体
元件和积体电路
材料上。
声明:以上例句、词分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4元组)长度的
存取允许不对齐
址,字组是以低
字节
前的顺序储存
中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁
的
质,被预期能运用
的元件和积
电路的材料上。
声明:以上例句、词分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆存取允许不对齐记忆
位址,字组是以低位字节
前的顺序储存
记忆
。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
现
氮
料上具有室温铁磁性的性质,被预期能运用
磁性记忆
的元件和积
电路的
料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
组(word, 4
元组)长度的记忆体存取允许不对齐记忆体
址,
组是以
节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性
,
期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。