Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响分子向矢的分布,因而可以刻蚀电镜术揭示其向向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

于样品淬火后晶片装饰在织构上响分子取向矢的分布,因可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响子取向矢的,而可用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻镜术向错取向矢图。