Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响向矢的
布,因而可以用化学刻蚀和电镜
术揭示其向错和
向矢图。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响向矢的
布,因而可以用化学刻蚀和电镜
术揭示其向错和
向矢图。
声明:以上例句、词类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在织构
影响分子取向矢的分布,因
可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以例句、词性分类均
网资源自动生成,部分未经过人工审核,其表达内容亦
代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
于样品淬火后晶片装饰在织构
影响分子取向矢的分布,因
可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以例句、词性分类均
网资源自动生成,部分未经过人工审核,其表达内容亦
代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取矢的分布,因而可以用
蚀
电镜
术揭示其
取
矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜
术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动,
分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上不影响分子取
的分布,因
用化学刻蚀和电镜
术揭示其
错和取
。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎
我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.
由于样品淬火后晶片装饰在织构而不影响
子取向
布,因而可
用化学刻蚀和电镜
术揭示其向错和取向
图。
声明:句、词性
类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。