Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正的方法对肖特基器件后部封装中的压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

文对一些毫米波肖特基势混频二征噪声温度进行测和分析。介绍在常温和致冷下混频二征噪声的测方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最用正交试验的方法对肖特基器件封装中的压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一波肖特基势混频二极管本征噪声温度进行测试和分析。介绍在常温和致冷下混频二极管本征噪声的测试方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试法对肖特基器件后部封装中压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一些毫米波肖特基势混管本征噪声温度进行测试和分析。介绍在常温和致冷下混管本征噪声测试法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对器件后部封装中的压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一些毫米波势混频二极管本征噪声温度进行测试和分析。介绍在常温和致冷下混频二极管本征噪声的测试方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

正交试验的方法对肖特基器件部封装中的压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一些毫米波肖特基势混频二极管本征度进行测试和分析。介绍在常和致冷下混频二极管本征的测试方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用验的方法对肖特基器件后部封装中的压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

文对一些毫米波肖特基势混频二极噪声温度进行测和分析。介绍在常温和致冷下混频二极噪声的测方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

后用正交试验的方法对肖特基器件后部封装中的压焊工艺行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一些毫米波肖特基势混频二极管本征噪声行测试和分析。介绍在常和致冷下混频二极管本征噪声的测试方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验方法肖特基器件后部封压焊工艺进行参数优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

一些毫米波肖特基势混频二极管征噪声温度进行测试和分析。介绍在常温和致冷下混频二极管征噪声测试方法。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺优化设计。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一些毫米波肖特基势混频二极管本征噪声温度测试和分析。介绍在常温和致冷下混频二极管本征噪声的测试方法。