The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词性分类均由资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构观
,磁导率减落
用计算机辅助系统的阻抗自动
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外电感电容电阻计
仪(HP4284A)
C-V曲线
;
安培计
仪(HP4140B)
J-V曲线
。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测
算机辅助系统的
抗自动测
仪(LCR
桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以感
仪(HP4284A)进行C-V曲线
测;以微安培
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助
的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
电感电容电阻计
仪(HP4284A)进行C-V曲线
测;
微安培计
仪(HP4140B)进行J-V曲线
测。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射对粉
的结构
行了观测,磁导率减落测
用计算机辅助系统的阻抗自动测
(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计(HP4284A)
行C-V曲线
测;以微安培计
(HP4140B)
行J-V曲线
测。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
X射线衍射仪对粉末样品的结构进行了观
,磁导率减落
算机辅助系统的
抗自动
仪(LCR
桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以感
容
仪(HP4284A)进行C-V曲线
;以微安培
仪(HP4140B)进行J-V曲线
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词类均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。