Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅中并经热处理所形成微孔,对金属原子吸除作用已为大量研究所。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

后用正交试验方法对肖特基器件后部封装中压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智化二极管系统（IDS），高景力保了生产可靠进行。自动补偿印版表面不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下，1N3595漏电流一般会小于1皮安，此电路不会影响10pA或更大电流测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅并经热处理所形成微孔,对金属原子吸除作用已为大量研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验方法对肖特基器件后部压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术有广阔应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化二极管系统（IDS），高景深能力保证了生产可靠进行。自动补偿印版表面不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下，1N3595漏电流一般会小于1皮安，此电路不会影响10pA或更大电流测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠。动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制腔面非收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当的正偏压可以减小或消失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处所成的微孔,对金属原子的吸除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

质扩散诱导量子阱混技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

对一些毫米波肖特基势混频二征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二加适当的正偏可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅中并经热处理所形成微孔,对金属原子吸除作用已为大量研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验方法对肖特基器件后中压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪温度进行了试和分析。介绍了在常温和致冷下混频二极管本征噪试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化二极管系统（IDS），高景深能力保证了生产可靠进行。自动补偿印版表面不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下，1N3595漏电流一般会小于1皮安，此电路不会影响10pA或更大电流量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经所形成的微孔,对金属原子的吸除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

散诱导量子阱混技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中处理所形成的微孔,对金属原子的吸除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊工艺进行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道二极管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的二极管系统（IDS），高景深的能力保证了生产的可靠进行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,且发现对二极管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除作用已为大量的研究所证实。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验的方法对肖特基器件后部封装中的压焊行了参数优化设计。

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

非线性偏置隧道管单稳线路,在毫微秒脉冲技术中有广阔的应用前途。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本对一些毫米波肖特基势混管本征噪声温度行了测试和分析。介绍了在常温和致冷下混管本征噪声的测试方法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化的管系统（IDS），高景深的能力保证了生产的可靠行。自动补偿印版表面的不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器的输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对管加适当的正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。