An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
闭锁效应入手,
抑制闭锁一种新方法—伪闭锁路径法。
n. 互补金属氧化物半导体
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入90nm甚至65nm及以
。
：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件
观点；若发现问题，欢迎向我们指正。
用户正在搜索
carbolate, carbolated, carbolfuchsin, carbolic, carbolic acid, carboligase, carboline, carbolineum, carbolism, carbolismus,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件
效应入手,提出抑制一种新方法—伪路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入90nm
65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
carbometry, carbomite, carbomycin, carbon, carbon arc, carbon copy, carbon cycle, carbon dating, carbon dioxide, carbon disulfide,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，
特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审
，
达内容亦不代本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
carbonado, carbonara, Carbonari, carbonas, carbonatation, carbonate, carbonate-apatite, carbonated, carbonated water, carbonation,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件效应入手,提出了抑
一种新方法—伪路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm65nm
以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
carbonic acid, carbonicacid, carbonide, carboniferous, carboniferous period, carbonification, carbonify, carboniogenesis, carbonise, carbonite,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金
物半导体
物半导体An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分
人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
carbonnade, carbonolite, carbonometer, carbonometry, carbonous, carbontetrabromide, carbonuria, carbonyl, carbonyl group, carbonylate,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
用户正在搜索
carborundum, carborundumpowder, carbosand, carbosapol, carboseal, carbostyril, carbothermal, carbothialdine, carbothiazol, carbowax,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
用户正在搜索
cardines, carding, cardinosternal, cardio-, cardioacceleration, cardioacceleratory, cardioactivator, cardioactive, cardioangiography, cardio-angiology,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁
手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进了90nm甚至65nm及以下。
声明：以
、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
cardiocoelom, cardiodemia, cardiodilator, cardiodiosis, cardiodynia, cardiodysesthesia, cardiodysneuria, cardio-encephalopathy, cardiogenesis, cardiogenic,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件应入手,提出了抑制一种新方法—伪路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例、词
分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
cardiokinetic, cardiokymograph, cardiolipin, cardiolith, cardiologist, cardiology, cardiolysin, cardiolysis, cardiomalacia, cardiomegalia,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效应入手,提出了抑制闭锁一种新方法—伪闭锁路
法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造
快速发展，可量产CMOS，特征线宽也由0.13um 进入了90nm甚至65nm及以下。
声明：以上例句、词性分类均由互联网资源自动生成，部分未经过人工审核，表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
cardionephric, cardioneural, cardioneurosis, cardiopalmus, cardiopaludism, cardiopath, cardiopathic, cardiopathology, cardiopathy, cardiopericardiopexy,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,
n. 互补金属氧化物半导体
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件闭锁效手,提出了抑制闭锁一种新方法—伪闭锁路径法。
95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术快速发展，可量产CMOS技术，其特征线宽也由0.13um 进了90nm甚至65nm及
下。
声明：
句、词性分类均由互联网资源自动生成，部分未经过人工审核，其表达内容亦不代表本软件观点；若发现问题，欢迎向我们指正。
用户正在搜索
cardiopneumograph, cardiopneumonopexy, cardioprotectant, cardioptosia, cardioptosis, cardiopulmonary, cardiopulmonary arrest, Cardiopulmonary Resuscitation, cardiopuncture, cardioregulatory,
相似单词
CMMI, CMMS, CMMSSA, CMN, CMO, CMOS, CMOSIC, CMP, cmpd, cmpl,