For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以阻计量仪(HP4284A)进行C-V曲线量测;以微安培计量仪(HP4140B)进行J-V曲线量测。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以阻计量仪(HP4284A)进行C-V曲线量测;以微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏
流一般会小于1皮安,此
路不会影响10pA或
流的测量。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻(HP4284A)进行C-V曲线
测;以微安培
(HP4140B)进行J-V曲线
测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般
小于1皮安,此电路
响10pA或更大电流的测
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测;以微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
1mV
向偏置之下,1N3595
漏电流一般会小于1皮安,此电路不会影响10pA或更大电流
测量。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件观点;若发现问题,欢迎向我们指
。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测;以培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮
,此电路不会影响10pA或更大电流的测量。
声明:以上例句、词性分类均网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
外以电感电容电阻计
仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测
。
:以上例
、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测;以安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测量。
声明:以上例句、词性分类均由互源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外电感电容电阻计量仪(HP4284A)进行C-V曲线量测;
微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测量。
:
上
、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以感
阻计量仪(HP4284A)进行C-V曲线量测;以微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏
流一般会小于1皮安,此
路不会影响10pA
流的测量。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外容
阻计量仪(HP4284A)进行C-V曲线量测;
微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV
正向偏置之下,1N3595
漏
一般会小于1皮安,此
路不会影响10pA或更大
测量。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。