For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏流一般会小于1皮安，此路不会影响10pA或流的测量。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以电感电容电阻(HP4284A)进行C-V曲线测；以微安培(HP4140B)进行J-V曲线测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏电流一般小于1皮安，此电路响10pA或更大电流的测。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

1mV向偏置之下，1N3595漏电流一般会小于1皮安，此电路不会影响10pA或更大电流测量。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测；以培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏电流一般会小于1皮，此电路不会影响10pA或更大电流的测量。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

外以电感电容电阻计仪(HP4284A)进行C-V曲线测；以微安培计仪(HP4140B)进行J-V曲线测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测；以安培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外电感电容电阻计量仪(HP4284A)进行C-V曲线量测；微安培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏电流一般会小于1皮安，此电路不会影响10pA或更大电流的测量。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感阻计量仪(HP4284A)进行C-V曲线量测；以微安培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV的正向偏置之下，1N3595的漏流一般会小于1皮安，此路不会影响10pA流的测量。

For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外容阻计量仪(HP4284A)进行C-V曲线量测；微安培计量仪(HP4140B)进行J-V曲线量测。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使1mV正向偏置之下，1N3595漏一般会小于1皮安，此路不会影响10pA或更大测量。