For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲
;以微安培计
仪(HP4140B)进行J-V曲
。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲
;以微安培计
仪(HP4140B)进行J-V曲
。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正
之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测;以微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测量。
声明:以上例句、词性分类均由互联网动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测;以微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测量。
声明:以上例句、词性分类均由互联网资生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以感
容
阻计
(HP4284A)
行C-V曲线
测;以微安培计
(HP4140B)
行J-V曲线
测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV
正向偏置之下,1N3595
流一般会小于1皮安,此
路不会影响10pA或更大
流
测
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进行C-V曲线量测;以计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮
,此电路不会影响10pA或更大电流的测量。
声明:以上例句、词性分类联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外电感电容电阻计量仪(HP4284A)进行C-V曲线量测;
微安培计量仪(HP4140B)进行J-V曲线量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测量。
声:
、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲
;以微安培计
仪(HP4140B)进行J-V曲
。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正
之下,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲
;以微
培计
仪(HP4140B)进行J-V曲
。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏置之下,1N3595的漏电流一般会小
1
,此电路不会影响10pA或更大电流的
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计量仪(HP4284A)进C-V
量测;以微安培计量仪(HP4140B)进
J-V
量测。
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
即使1mV的正向偏
,1N3595的漏电流一般会小于1皮安,此电路不会影响10pA或更大电流的测量。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。