In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

氮化镓材料上具有室温铁磁性的性质，被预期能运用磁性记忆体的元件和积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从奈米这种白色羊毛状的金属氧化物（像是让锌900~1200℃的烘烤环境下与氩气作用）和奈米线开始著手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室性的性质，被预期能运用在性记忆体的元件和积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从奈米这种白色羊毛状的金属氧化物（像是让锌在900~1200℃的烘烤环境下与氩气作用）和奈米线开手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室温的质，被预期能运用在记忆体的元件和积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从奈米这种白色羊毛状的金属氧化物（像是让锌在900~1200℃的烘烤环境下与氩气作用）和奈米线手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现氮化镓材料上具有室温铁的质，被预期能运用记忆体的元件和积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从奈米这种白色羊毛状的金属氧化物（像是让锌900~1200℃的烘烤与氩气作用）和奈米线开始著手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室温铁磁性的性质，被预期能运用在磁性记忆的元件电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从奈米这种白色羊毛状的金属氧化（让锌在900~1200℃的烘烤环境下与氩气作用）奈米线开始著手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室温铁磁性的性，期能运在磁性记忆体的元件积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从米这种白色羊毛状的金属氧化物（像是让锌在900~1200℃的烘烤环境下与氩气作）米线开始著手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便色羊毛状的金属氧化物（像是让锌在900~1200℃的烘烤环境下与氩气作用）和线开始著手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

氮化镓材料上具有室温铁磁性的性质，被预期能运用磁性记忆体的元件和积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从奈米这种白色羊毛状的金属氧化物（像是让锌900~1200℃的烘烤环境下与氩气作用）和奈米线开始著手。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室温铁磁的，预期能运用在磁记忆体的元件积体电路的材料上。

In 2000 I started with nanobelts, white woollike products made by baking a metal oxide such as zinc in the presence of argon gas at 900 to 1,200 degrees Celsius, and with nanowires.

2000年，我便从这种白色羊毛状的金属氧化物（像是让锌在900~1200℃的烘烤环境下与氩气作用）线开始著手。