The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算
助系统的阻抗自动测
仪(LCR
桥)来完成。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算
助系统的阻抗自动测
仪(LCR
桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外容
阻计
仪(HP4284A)进行C-V曲线
测;
微安培计
仪(HP4140B)进行J-V曲线
测。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗
测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词性分类均由互联网资源成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X对粉末样品的结构进行了观
,磁导率减落
用计算机辅助系统的阻抗自动
(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计(HP4284A)进行C-V曲
;以微安培计
(HP4140B)进行J-V曲
。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射对粉末样品的结构进行了观
,磁导率减落
用计算机辅助系统的阻抗
(LCR
)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以感
容
阻计
(HP4284A)进行C-V曲线
;以微安培计
(HP4140B)进行J-V曲线
。
声明:以上例句、词性分类均由互联网资源生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品结构进行了观测,磁导率减落测
用计算机辅助
阻抗自动测
仪(LCR电桥)来完
。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
以电感电容电阻计
仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词性分类均由互联网资源自动生,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以上例句、词性分类联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以电感电容电阻计仪(HP4284A)进行C-V曲线
测;以微安培计
仪(HP4140B)进行J-V曲线
测。
声明:以、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
用X射线衍射仪对粉末样品的结了观测,磁导率减落测
用计算机辅助系统的阻抗自动测
仪(LCR电桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外电感电容电阻计
仪(HP4284A)
C-V曲线
测;
培计
仪(HP4140B)
J-V曲线
测。
声明:上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。