Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度
记忆体存取允许不对齐记忆体位址,字组是以低位字


顺序储存
记忆体中。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度
记忆体存取允许不对齐记忆体位址,字组是以低位字


顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室温铁磁

质,被预期能运用
磁
记忆体
元件和积体电路
材料上。
声明:以上例句、词
分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字
(word, 4位元
)长度的记忆体存取允许不对齐记忆体位址,字

低位字节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室温铁磁性的性质,被预

用
磁性记忆体的元件和积体电路的材料上。
声明:
上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记
存取允许不对齐记
位址,字组是以低位字节
前的顺序储存
记

。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化

上具有室温铁磁性的性质,被预期能运用
磁性记
的元件和积
电路的
上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度
记忆体存取允许不对齐记忆体位址,字组是以低位字节
前

储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室

性
性质,被预期能运用
性记忆体
元件和积体电路
材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度

体存取允许不对齐
体位址,字组是以低位字节
前
顺序储存

体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓
料上具有室温铁磁性
性质,被预期能运用
磁性
体
元件和积体电路
料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互

源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度的记忆体存取允许不对齐记忆体位址,字组是以低位字节
前的顺序储存
记忆体
。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.





材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若
问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位
组)长度的记忆体存取

对齐记忆体位址,字组是以低位字节
前的顺序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的
件
积体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦
代表本软件的观点;若发现问题,欢迎向我们指正。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字组(word, 4位元组)长度
记忆体存取允许不对齐记忆体位址,字组是以低位字节


序储存
记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室温



质,被预期能运用

记忆体
元件和积体电路
材料上。
声明:以上例句、词
分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。