The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
样方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导
至OZn反位缺陷深受主能级的跃迁。
声明:以上例、词性分类均由互联网资源自动生成,部分未经过人工审
,
达内容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
时本文还计算了和到轻子对的衰变宽
。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
方法测量的530nm绿峰的发光衰变规律显示绿光主要源于导
至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词性分类联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光衰变规律显示绿光主要OZn
缺陷深受主能级的跃迁。
声明:以上例句、词性分类均由互联网资自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm
发光衰变规律显示
光主要源于导
至OZn反位缺陷深受主能级
跃迁。
声明:以、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm
发光衰变规律显示
光主要源于导
至OZn反位缺陷深受主能级
跃迁。
声明:句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量的530nm绿峰的发光规律显示绿光主要源于导
至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词性分类均由互源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对的衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样法
量的530nm绿峰的发光衰变规律显示绿光主要源于导
至OZn反位缺陷深受主能级的跃迁。
声明:以上例句、词均由互联网资源自动生成,部
未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
The leptonic decay widths of and are also given here.
同时本文还计算了和到轻子对衰变宽度。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同样方法测量530nm绿
光衰变规律显示绿光主要源于导
至OZn反位缺陷深受主能级
跃迁。
声:
例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件
观点;若
现问题,欢迎向我们指正。