Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不子取向矢的布,因而可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

于样品淬火后晶片装饰在织构影响分子取向矢的分布,因可以用化学刻蚀和电镜术揭示其向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜术揭示向错和取向矢图。

Because the distribution of molecular director was not affected by lamellar decorating after quench, chemical etching and SEM technique were used to reveal disclination and director patterns.

由于样品淬火后晶片装饰在织构上不影响分子取向的分布,以用化学刻蚀和电镜术揭示其向错和取向。