In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上有
温铁磁性的性质,被预期能运用在磁性记忆体的元件和
体电路的材料上。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上有
温铁磁性的性质,被预期能运用在磁性记忆体的元件和
体电路的材料上。
声明:以上例句、词性分类均由互联网资生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁的
质,被
运用在磁
记忆体的元件和
体电路的材料上。
声明:以上例、词
分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料
具有室温铁
性的性质,被预期能运
性记忆体的元件和
体电路的材料
。
声:
例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其达内容亦不
软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和体电路的材料上。
声明:以上、词性分类均由互联网资源自动生成,部分未经过人工
,
表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和
体电路的材料上。
声明:以上例、词性分类均由互联网资源自动生成,部分未经过人
,其表达内容亦不代表本软件的观点;若
现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆体的元件和体电路的材料上。
声明:以上句、词性分类均由互联网资源自动生成,部分未经过人工审核,
内容亦不代
本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性性质,被预期能运用在磁性记忆体
件和
体
路
材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料上具有室温铁磁性的性质,被预期能运用在磁性记忆的元件
路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未经过人工审核,其表达内容亦不代表本软件的观点;若发现问题,欢迎向我们指正。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发化镓材料上具有室温铁磁性的性质,被预期能运用
磁性记忆体的元件和
体电路的材料上。
声明:以上例句、词性分类均由互联网资源自动生成,部分未工审核,其表达内容亦不代表本软件的观点;若发
问题,欢迎向我们指正。