The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏
计、配有照明系统的控制
。
The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.
电磁铁和恒流电源、数字式高斯计 (霍尔效应)、安培计和伏
计、配有照明系统的控制
。
The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.
件的总离子注入能力高达300千拉德(硅),抗单粒子效应为82兆电子伏
,
有屏蔽型和商用现货型的产品。
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